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| to ? 126c 1. emitter 2. collector 3. base to-126c plastic-encapsulate transistors 2SC3807 transistor (npn) features z large current capacity z high dc current gain z low collector-emitter saturation voltage applications z low frequency general purpose amplifier maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =10a,i e =0 30 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 25 v emitter-base breakdown voltage v (br)ebo i e =10a,i c =0 15 v collector cut-off current i cbo v cb =20v,i e =0 0.1 a emitter cut-off current i ebo v eb =10v,i c =0 0.1 a h fe(1) v ce =5v, i c =0.5a 800 3200 dc current gain h fe(2) v ce =5v, i c =1a 600 collector-emitter saturation voltage v ce(sat) i c =1a,i b =20ma 0.5 v base-emitter saturation voltage v be(sat) i c =1a,i b =20ma 1.2 v collector output capacitance c ob v cb =10v,i e =0, f=1mhz 27 pf transition frequency f t v ce =10v,i c =50ma 260 mhz symbol parameter value unit v cbo collector-base voltage 30 v v ceo collector-emitter voltage 25 v v ebo emitter-base voltage 15 v i c collector current 2 a p c collector power dissipation 1.2 w r ja thermal resistance from junction to ambient 104 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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